Mar 30, 2016 - Hi Guys today I am sharing Analog Electronic Circuits notes this subject is in 3rd Sem Electronics and Communication of VTU (Vishveshvaraiah Technical University). This is one of the toughest subject along with Field theory and Network analysis. This subject mainly contains basic definition and details of. He written notes for many subjects in Electronics of 3rd, 4th, 5th, 6th. Download Arun Kumar Notes. PDF notes by Arun Kumar for VTU E&C.
Latest Material Links Link – Link – Link – Link – Link – Link – Old Material Links According to R-13 Notes Unit – 1 Unit – 2 Unit – 3 Unit – 4 UNIT-I p-n Junction Diode: Qualitative Theory of p-n Junction. P-n Junction as a Diode, Diode Equation. Volt-Ampere Characteristics, Temperature dependence of V I Characteristics. Ideal versus Practical – Resistance levels ( static and dynamic0 Transition and diffusion capacitances. Diode Equivalent circuits, Load Line Analysis, Breakdown Mechanisms in semi conductor diodes. Zener diode characteristics.
UNIT- II: Rectifiers and Filters: the p-n junction as a rectifier, half wave rectifiers, full wave rectifiers, bridge rectifiers harmonic components in a rectifier circuit. Inductor filters, capacitor filtlers, L SECTION filteres, d- section filters. Composition of filters, voltage regulation using zener diode. UNIT- III: Bipolar Junction Transistor: the junction transitor, transistor current components. Transistor as an amplifier. Transistor construction. BTJ operation, BJT symbol, common base, common emitter and common collector configuration, limits of operation, BJT specification.
UNIT- IV: Transistor Biasing and Stabilization: Operating point, the DC and AC load lines. Need for biasing. Collector feedback bias. Emitter feedback bias, collector-emittor feedback bias. Voltage divider bias. Bias stability. Stabilization factors.
Stabilization against variations in V BE and beta. Bias compensation using diodes and transistors. Thermal runaway, thermal stability. UNIT-V: Small Signal Low Frequency BJT Models BJT hybrid model, determination of h-parameters from transistor characteristics. Analysis of a transistor amplifier circuit using h-parameters. Comparision of CB, CE, and CC amplifiers, configurations.
UNIT- VI: Field Effect Transistor The Junction field effect transistor (construction, principle of operation, symbol) pinch of voltage, voltage-ampere characteristics, the JFET small signal model, MOSFET construction, principle of operation, symbol), MOSFET characteristics in enhancement and depletion modes. UNIT- VII: FET AMPLIFIERS: FET Common Source Amlifiere, Common Drain Amplifier, Generalized FET Amplifier, Biasing FET, FET as Voltage Variable Resistor, Comparision of BJT, and FET. Pinball Hall Of Fame Ps2 Iso Games. , Uni junction Transistor. UNIT-VIII Special Purpose Electronic Devices: Priniciple of Operation and Characteristics of Tunnel Diode ( with the help of Energy Band Diagram 0 and Varactor Diode.
Principle of Operation of Schottky Barrier Diode, SCR and Semiconductor Photo Diode. TEXT BOOKS: ELECTRONIC DEVICES AND CIRCUITS Notes – EDC Notes – EDC Pdf Notes • Millman’s Electronic Devices and Circuits – J.Millman, C.C.Halkias, and Satyabratha Jit Tata McGraw Hill, 2nd Ed., 1998. TMH • Electronic Devices and Circuits – R.L. Boylestad and Louis Nashelsky, Pearson/Prentice Hall,9th Edition,2006. • Introduction to electronic devices and circuits-robert t painter PE. REFERENCES: ELECTRONIC DEVICES AND CIRCUITS Notes – EDC Notes – EDC Pdf Notes • Integrated electronics – J.Millman and Christos c halkias 1991, 2008, TMH. • Electronic Devices and Circuits – Dr.
Lal Kishore, B.S. Publications, 2nd Edition, 2005. • Electronic Devices and Circuits – Anil k maini, varsha agarwal, 2009 WIPL • Electronic Devices and Circuits – s salivahana n suresh kumar, a vallavaraj 2008 TMH. Note:- These notes are according to the r09 Syllabus book of.In R13,8-units of R09 syllabus are combined into 5-units in r13 syllabus.